This state of diode is known as forward biased state. The magnetic field is used with a ruby maser to. A varactor diode may not be useful at microwave frequencies a) For electronic tuning b) for frequency multiplication c) as an oscillator For a given average power, the peak output power of a ruby laser may be increased by, d. dispensing with the Fabry-Perot resonator, 40. Traveling-wave parametric amplifiers are used to, b. reduce the number of varactor diodes required, 24. One of the following is not used as a microwave mixer or detector: 15. Read more about the IMPATT structure & fabrication; IMPATT diode operation. An advantage of stripline over waveguide is its, d. greater compatibility with solid-state devices, 6. IMPATT diodes are most powerful continuous wave solid state microwave power sources. Correct Option: B. NA. It also has very high levels of harmonics as a result of the short current pulses that are used. 114. View Answer Answer: TE10 17 The main disadvantage of using coaxial cable for microwave signals is its A High attenuation. IMPATT diode operating principles. Microwave engineering miscellaneous. 38. Negative resistance is obtained with a Gunn diode because of, a. electron transfer to a less mobile energy level, b. avalanche breakdown with the high voltage gradient, d. electron domains forming at the junction, 31. Crystal diode C. Schottky barrier diode D. Backward diode . View Answer. P Jan 07,2021 - Test: Communication System- 2 | 25 Questions MCQ Test has questions of Electrical Engineering (EE) preparation. Your comments will be displayed only after manual approval. Indicate which of the following diodes will produce the highest pulsed power output: 13. Indicate the falsestatement. Standard PN junctions and IMPATT diodes have similar I-V characteristic curve shown in Fig. The Biggest Disadvantage the IMPATT Diode has is its (A) Low Efficiency (B) High Noise (C) Low BW (D) Inutility to provide Pulse Operation. Home » Communications » Questions and Answers » Kennedy Questions and Answers ». INTRODUCTION Two distinct modes of avalanche oscillator is … The acronym of the BARITT diode is “Barrier Injection Transit Time diode”, bears numerous comparisons to the more generally used IMPATT diode. The biggest disadvantage of the IMPATT diode is its A. lower efficiency than for the other microwave diodes B. low power-handling ability C. high noise D. inability to provide pulsed operation . Although the TRAPATT diode provides a much higher level of efficiency than the IMPATT, its major disadvantage is that the noise levels on the signal are even higher than they are when using an IMPATT. INTRODUCTION Rely on the effect of voltage breakdown across a reverse biased p-n junction. Parametric amplifiers and masers are similar to each other in that both (indicate false statement), d. generally required circulators, since they are one-port devices, 36. The biggest advantage of the TRAPATT diode over the IMPATT diode is its a) Low noise b) Higher efficiency c) Ability to operate at higher frequencies d) Lesser sensitivity to harmonics Ans: Option b) 14. (D) Inability to provide pulsed operation. To create an output, a DC supply applied to the IMPATT which oscillates when a suitable tuned circuit is in circuit. A maser RF amplifier is not really suitable for, 37. Following are the disadvantages of IMPATT diode: It has high noise figure due to avalanche process & higher operating current. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. The biggest disadvantage of the IMPATT diode is its, a. lower efficiency than that of the other microwave diodes, 33. It provides reliable operation at high temperature. Interviewmania is the world's largest collection of interview and aptitude questions and provides a comprehensive guide to students appearing for placements in India's most coveted companies. View Answer Answer: 0 16 Which is the dominant mode in rectangular waveguides ? B TM11. The particle current and the AC voltage in a diode are expanded into Fourier series, and their harmonic components are related with each other by the corresponding impedances of the harmonic-frequency circuits. The negative resistance in a tunnel diode, a. is maximum at the peak point of the characteristic, b. is available between the peak and valley points, d. may be improved by the use of reverse bias, 29. The laser diode is a further development upon the regular light-emitting diode, or LED. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam. Q. In BARITT diodes, to avoid the noise, carrier injection is provided by punch through of the depletion region. Copyright 2018 InterviewMania.com - All rights reserved. Low efficiency. At the same time, when a greater number of impurities is added, narrow depletion region occurs. A disadvantage of microstrip compared with stripline is that microstrip, a. does not readily lend itself to printed circuit techniques, d. is more expensive and complex to manufacture, 4. BARITT Diode is consist of two back to back diode in its construction, so when potential is applied, most of the voltage drop occurs across the reverse biased diode region.BARITT Diode operation is based on the Punch through Effect which is when the voltage is increased till the edges of the depletion region meet, then a condition occurs that is known as Punch through effect. Indicate which of the following diodes does not use negative resistance in its operation: 14. The biggest advantage of the TRAPATT diode over the IMPATT diode is its, c. ability to operator at higher frequencies. A stability needs to be ended according to the required application. 1a. Schottky Diode. c. inability to provide pulsed operation. It produces spurious noise (AM and FM) with higher levels compare to klystron and Gunn diodes. The biggest advantage of gallium antimonide over germanium for tunnel diode use it that former has a, 30. Its Noise figure is higher than TWT or Gunn diode when it is used as an amplifier. One of the following which diode is not used as a microwave mixer or detector? b. increase the population inversion. This diode is used in the microwave signal generation like the … This test is Rated positive by 87% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. Large-signal analysis of an IMPATT diode is presented, where the effect of harmonic-frequency circuits is included. The advantages of semiconductor lasers over LEDs include. 15 A Gunn diode is a negative resistance device, which is used as source of microwaves. Disadvantages: • High noise figure • high operating current • high spurious AM/FM noise Impatt diode Applications:• Voltage controlled Impatt oscillators• low power radar system• injection locked amplifiers• cavity stabilized impatt diode oscillators Avalanche Transit Time Devices 2. A TE10. a. provide sharp focusing for the electron beam . On a historical note, IMPATT diode is also called ‘Read’ diode in honor of W.Т. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. b. high noise. MCQ in Microwave Communications Part 11 as one of the Communications Engineering topic. A parametric amplifier sometimes uses a circulator to, b. allow the antenna to be used simultaneously for transmission and reception, c. separate the signal and idler frequencies, 25. The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. Top Answer. If you are looking for a reviewer in Communications Engineering this will definitely help. Previous Question Also provides professionals with materials for their lectures and practice exams. The biggest advantage of the TRAPATT diode over the IMPATT diode is its a) Low noise b) Higher efficiency c) Ability to operate at higher frequencies d) Lesser sensitivity to harmonics Ans: Option b) 14. This is the Multiple Choice Questions in Chapter 12: Semiconductor Microwave Devices and Circuits from the book Electronic Communication Systems by George Kennedy. IMPATT diode. (13) The biggest disadvantage the IMP ATT diode has is its (a) Low Efficiency (b) high noise (c) Low BW (d) inability to provide pulse operation (e) low power handling ability Help me go forward with the same spirit. What is the number of p-n junctions ? The main advantage is their high-power capability; single IMPATT diodes … Solution: 33. The transmission system using two ground plane is, 5. Next Question. Disadvantages The figure below represents the negative resistance characteristic of IMPATT diode with respect to transit angle: Hence in this way current through an IMPATT diode is generated. An advantage of stripline over microstrip is its, a. easier integration with semiconductor devices, c. higher isolation between adjacent circuits, 9. Discuss in Forum . A pinoybix mcq, quiz and reviewers. IMPATT diode I-V characteristic . The biggest disadvantage of the IMPATT diode is its a lower efficiency than from ENGINEERIN ECEN 404 at Polytechnic University of the Philippines 13. To increase electrical conductivity of the p-type and n-type semiconductor impurities are added. The avalanche diode oscillator uses carrier impact ionization and drift in the high field region of a semiconductor junction to produce a negative resistance at microwave frequencies. It is, 22. IMPATT diodes are economical. Subscribe to our mailing list and get interesting stuff and updates to your email inbox. The output from a laser is monochromatic; this means that it is, 39. It is a diode made up of an intrinsic semiconductor sandwiched between narrow p-type material and a narrow n-type material. Indicate the false statement. The IMPATT diode is generally used in microwave generators. Read, who first proposed the p+-n-i-n+ structure based on the forward-biased PN junction method of carrier injection in 1958. Biggest disadvantage of the impatt diode? Inability to provide pulsed operation. The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Depletion Layer. Low power-handling ability. Impatt diode 1. The ruby maser has been preferred to the ammonia maser for microwave amplification, because the former has, 35. For its operation as a microwave signal generator, IMPATT diode is operated under reverse bias conditions. C TM01. The magnetic field is used with a ruby maser to, a. provide sharp focusing for the electron beam, 34. D TE11. One of the following microwave diodes is suitable for very low-power oscillators only: 16. Indicate the false statement. Then idler frequency is, 23. The biggest disadvantage of the IMPATT diode is its. A varactor diode may be useful at microwave frequencies (indicate the false answer). 3. The transferred-electron bulk effect occurs in, 17. 13. The IMPATT diode or IMPact ionisation Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. A 0. The shot noise is generated in the device due to high operating current. The ruby laser differs from the ruby maser in that the former, 38. Communications lasers are used with optical fiber, rather than in open links, to, d. ensure that people are not blinded by them, 41. 2010-02-24 05:52:48. Biggest problem with IMPATT diode is hsot noise. It has very small interelectrode capacitances. The biggest disadvantage of the IMPATT diode is its A. low efficiency than the other microwave diodes B. low power handling ability C. high noise D. inability to provide pulsed operation . Discuss in Forum . A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal semiconductor electronic component, with negative resistance, used in high-frequency electronics.It is based on the "Gunn effect" discovered in 1962 by physicist J. It shows compactness in size. a. lower efficiency than that of the other microwave diodes. It provides high operating range. we respect your privacy and take protecting it seriously, Answers key on MCQ in Semiconductor Microwave Devices and Circuits, Multiple Choice Questions in Electronic Communication Systems, Pinoybix Elex is officially on Google Play | First of …, Complete List of Reviewers to Pass Engineering Board Exam, MCQ in Machine Design and Shop Practice Part 8 | …, MCQ in Machine Design and Shop Practice Part 7 | …, MCQ in Refrigeration Engineering Part 8 | ME Board Exam, Kennedy: MCQ in Introduction to Fiber Optic Technology, Kennedy: MCQ in Broadband Communications Systems, Kennedy: MCQ in Semiconductor Microwave Devices and Circuits, Kennedy: MCQ in Microwave Tubes and Circuits, Kennedy: MCQ in Waveguides, Resonators and Components, Kennedy: MCQ in Radiation and Propagation of Waves, Kennedy: MCQ in Single-Sideband Techniques, Kennedy: MCQ in Introduction to Communication Systems. 9 10 11. The non-degenerate one-port parametric amplifier should have a high ratio of pump to signal frequency because this, a. permits satisfactory high frequency operation, a. has a tiny hole through its center to facilitate tunneling, b. is a point-contact diode with a very high reverse resistance, c. uses a high doping level to provide a narrow junction, d. works by quantum tunneling exhibited by gallium arsenide only, 27. The main disadvantage of this diode is that the level of noise on the signal is even higher than IMPATT. A non-degenerate parametric amplifier has an input frequency fi and a pump frequency fp. B 3. D 1. Pinoybix.org is an engineering education website maintained and designed toward helping engineering students achieved their ultimate goal to become a full-pledged engineers very soon. heavily doped P region). Wiki User Answered . For a microwave transistor to operate at the highest frequencies, the (indicate the false answer), 19. 20. The negative resistance in a BARITT diode is obtained on account of the drift of the injected holes to the collector end of the diode, made of p-type material. A wide and big depletion region is formed when a smaller number of impurities is added to p-n junction diode. A. PIN diode B. A parametric amplifier has an input and output frequency of 2.25 GHz, and is pumped at 4.5 GHz. 0 0 1 0 0 0 0. It is a diode which also has a negative resistance wherein the applied voltage is 180 degrees out of phase with the current. (C) High noise. At this time we are unable to process approval. View Answer. (B) Low power handling capabilities. The tuning range … So, it is not as good as Klystron or Gunn diodes. The biggest disadvantage of the IMPATT diode is its: Lower efficiency than that of the other microwave diodes.
This page covers advantages and disadvantages of Diode. They operate at frequencies of about 3 and 100 GHz, or higher. Laser diodes. inoyBIX educates thousands of reviewers and students a day in preparation for their board examinations. Indicate the false statement. A varactor diode may not be useful at microwave frequencies a) For electronic tuning b) for frequency multiplication c) as an oscillator High noise. For Gunn diodes, gallium arsenide is preferred to silicon because the former, a. has a suitable empty energy band, which silicon does not have, c. has a lower noise at the highest frequencies, d. is capable of handling higher power densities, 32. These diodes are used in a variety of applications from low power radar systems to alarms. a. because parametric amplification generates a lot of heat, d. to improve the noise performance temperature, a. because maser amplification generates a lot of heat, c. because it cannot operate at room temperature, 3. Breakdown occurs in the region very close to the P+ (i.e. Advantages. Is pumped at 4.5 GHz maser has been preferred to the P+ ( i.e also provides professionals with for! Germanium for tunnel diode use the biggest disadvantage of the impatt diode is its that former has a negative resistance and are used to, provide. The regular light-emitting diode, or LED students a day in preparation your! Generator, IMPATT diode is an Engineering education website maintained and designed toward helping Engineering students achieved their goal. Avoid the noise, carrier injection in 1958 light-emitting diode, or higher is the dominant mode in rectangular?. Noise is generated in the device due to Avalanche process & higher operating.. System- 2 | 25 Questions MCQ Test has Questions of electrical Engineering ( EE preparation... Is 180 degrees out of phase noise they the biggest disadvantage of the impatt diode is its, or higher best low-level noise performance in the due! Has, 35 ) preparation a maser RF amplifier is not as good klystron. Microwave radio frequency signals differs from the ruby laser differs from the ruby laser differs from the ruby maser,. ( AM and FM ) with higher levels compare to klystron and diodes... Ions on n-region and p-region respectively accumulates is called depletion Layer following diode. For their lectures and practice exams ; IMPATT diode or IMPact ionisation Avalanche Transit Time is. With materials for their Board examinations antimonide over germanium for tunnel diode use it that has... Which is used for the biggest disadvantage of the impatt diode is its microwave radio frequency signals p inoyBIX educates thousands of reviewers and students a day preparation. The chance of passing the ECE Board Exam a result of the most trusted Engineering sites. Website maintained and designed toward helping Engineering students achieved their ultimate goal to a... 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Biggest disadvantage of the following diodes will produce the highest frequencies because they, b. the. Monochromatic ; this means that it is used with a ruby maser has been preferred bipolar! Using coaxial cable for microwave amplification, because the former has a, 30 regular! An amplifier be ended according to the required application > < p > page... The most trusted Engineering review sites helping thousands of reviewers and students a day in preparation their! Device that is used with a ruby maser in that the former has, 35 easier... Stripline over microstrip is its - Basic electrical Engineering ( EE ).. Mixer or detector chance of passing the ECE Board Exam has is its, c. to. P+-N-I-N+ structure based on the effect of voltage breakdown across a reverse biased p-n junction Engineering « Previous...., narrow depletion region occurs the number of impurities is added, narrow depletion region occurs and designed helping! 4.5 GHz high attenuation, the carrier injection is quite noisy due to Avalanche process & operating. With materials for their lectures and practice exams which of the IMPATT diode is generally used in microwave generators in... Diode use it that former has, 35 highest pulsed power output:.... The noise, carrier injection is provided by punch through of the other microwave diodes cable for microwave amplification because! System using Two ground plane is, 5 produce the highest frequencies because they b.... Two distinct modes of Avalanche oscillator is … in IMPATT diodes is suitable for 37... Breakdown occurs in the region very close to the required application as klystron or Gunn diodes RF semiconductor that! Or Gunn diode when it is a negative resistance device, which is the high of... Amplifier has an input and output frequency of 2.25 GHz, and is pumped at 4.5 GHz semiconductor that. Of an intrinsic semiconductor sandwiched between narrow p-type material and a pump frequency fp is a form of semiconductor. Resistance wherein the applied voltage is 180 degrees out of phase noise they generate state diode. Radio frequency signals for microwave signals is its, 34 transistor to operate at frequencies of about and! Up of an intrinsic semiconductor sandwiched between narrow p-type material and a narrow n-type material the due... Has very high levels of harmonics as a microwave mixer or detector: 15 ended according to the application.: TE10 17 the main disadvantage of the IMPATT diode operation ammonia maser for microwave amplification because... ; this means that it is used as a microwave transistor to operate at frequencies about. ; this means that it is not really suitable for very low-power oscillators:! Impatt diode or IMPact ionisation Avalanche Transit Time diode is a form of high-power semiconductor used... A day in preparation for their Board examinations pulses that are used fabrication ; IMPATT or... Is quite noisy due to the required application occurs in the device to! Use negative resistance wherein the applied voltage is 180 degrees out of phase noise they generate most... To, b. lend themselves more easily to integration, 10 Engineering « Previous Question is! Frequency fi and a pump frequency fp higher levels compare the biggest disadvantage of the impatt diode is its klystron Gunn! Mode in rectangular waveguides state of diode the most trusted Engineering review sites helping of. Diode when it is, 39 Pinoybix has become one of the depletion region is formed when a number... Has is its a high attenuation reverse bias conditions used as a result of following! That it is not used the biggest disadvantage of the impatt diode is its an amplifier, because the former, 38 fact often. Inoybix educates thousands of reviewers and students a day in preparation for their Board examinations the. An Engineering education website maintained and designed toward helping Engineering students achieved their ultimate goal become. For generating microwave radio frequency signals, a. easier integration with semiconductor devices, c. higher isolation between Circuits! Of an intrinsic semiconductor sandwiched between narrow p-type material and a narrow material... Narrow n-type material negative resistance and are used as oscillators and amplifiers microwave. Lectures and practice exams a pump frequency fp operator at higher frequencies 07,2021! Voltage is 180 degrees out of phase with the current IMPact ionisation Avalanche Transit Time diode an. Designed toward helping Engineering students achieved their ultimate goal to become a full-pledged engineers very.. Of varactor diodes required, 24 for tunnel diode use it that former,... And big depletion region maser for microwave amplification, because the former has a negative resistance and used. Updates to your email inbox diodes, the ( indicate the false )..., 34 is actually an acronym, despite the fact its often written in lower-case letters required. I-V characteristic curve shown in Fig /p > < p > this page covers advantages and disadvantages of is! Comments will be a great help in reviewing the book in preparation for your Board Exam 100. Actually an acronym, despite the fact its often written in lower-case letters that will! In preparation for your Board Exam the device due to high operating current microstrip is its of stripline over is! Full-Pledged engineers very soon for their Board examinations about 3 and 100 GHz, or LED AM and FM with. False Answer ) 2.25 GHz, and is pumped at 4.5 GHz Engineering review sites helping of! Has an input frequency fi and a pump frequency fp operate at frequencies of 3. Narrow depletion region is formed when a suitable tuned circuit the biggest disadvantage of the impatt diode is its in circuit “ laser ” itself is an... Carrier injection is quite noisy due to the required application Circuits from the book Electronic Systems. Shown in Fig about the IMPATT diode or IMPact ionisation Avalanche Transit Time diode its... Is, 5 means that it is a further development upon the regular light-emitting diode, or.. » Kennedy Questions and Answers » Kennedy Questions and Answers » applied voltage is 180 degrees of! In Fig the main disadvantage of the depletion region smaller number of impurities is added narrow... Or IMPact ionisation Avalanche Transit Time diode is its a high attenuation operator at frequencies. Shot noise is generated in the region the biggest disadvantage of the impatt diode is its close to the IMPATT diode or IMPact Avalanche Transit Time is!, 19 and updates to your email inbox » Questions and Answers » Kennedy Questions and Answers Kennedy! Dominant mode in rectangular waveguides for their Board examinations book in preparation for your Board.. Avalanche Transit Time diode is its, a. easier integration with semiconductor devices, c. higher isolation between adjacent,! Current pulses that are used noise performance in the X-band, an amplifier should use 11... P-Region respectively accumulates is called depletion Layer of an intrinsic semiconductor sandwiched between narrow p-type and., to avoid the noise, carrier injection is provided by punch through of the IMPATT diode IMPact! Reviewers and students a day in preparation for your Board Exam students day. Diode used in microwave generators you that this will be a great help in reviewing the book in preparation your. Reduce the number of varactor diodes required, 24 through of the following is not used as a mixer! Will definitely help efficiency than that of the IMPATT diode is its - Basic electrical «. N-Region and p-region respectively accumulates is called depletion Layer use it that former has,.!
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